. Electronic Components Datasheets mmbta42 free download

File name mmbta42.pdf

MMBTA42 TRANSISTOR(NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.3 A PC Collector Power dissipation 0.35 W RJA Thermal Resistance, junction to Ambient 357 /mW TJ Junction Temperature 150 Tstg Storage Temperature -55to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE= 10V, IC= 1mA 60 DC current gain hFE(2) VCE= 10V, IC=10mA 100 200 hFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V VCE= 20V, IC= 10mA, Transition frequency